Revolutionary Electrode Formation Method for Si Nano Devices Realized by University-IAI Collaboration

Discovery of Breakthrough Electrode Formation Method without Accompanying Doping into Si Substrate

2010.12.08

National Institute for Materials Science
Chiba University
Tokyo Institute of Technology
Nagoya University
University of Tsukuba

The Advanced Electronic Materials Center of the National Institute for Materials Science, in joint work with Chiba University, Tokyo Institute of Technology, Nagoya University, the University of Tsukuba, Waseda University, and JST-CREST, developed a new electrode formation method for realization of future nano devices.

Abstract

  1. The Advanced Electronic Materials Center (Managing Director: Toyohiro Chikyo) of the National Institute for Materials Science (President: Sukekatsu Ushioda), in joint work with Chiba University, Tokyo Institute of Technology, Nagoya University, the University of Tsukuba, Waseda University, and JST-CREST, developed a new electrode formation method for realization of future nano devices.
  2. In this development project, the possibility of controlling the height of the Schottky barrier at metal/Si interfaces by doping only the metal side, without modifying the Si side, was predicted theoretically by Chiba University, and this was demonstrated in collaborative experiments by NIMS, Tokyo Institute of Technology, Nagoya University, the University of Tsukuba, Waseda University, and JST-CREST. This is an unprecedented new electrode formation method.
  3. With Si semiconductors, a good metal/Si bond had been realized by doping the Si side in order to achieve an electrode/Si bond with a low contact resistance value.
  4. However, with miniaturization of devices, deviations in the positions and the concentration of dopants added to the Si side began to affect the metal/Si interface, and it had become impossible to realize a stable electrode structure.
  5. Subsequently, with further miniaturization of the junction region in Si devices, there was a tendency in structural design toward 3-dimensional devices using Si wiring. However, until now, there was no method of forming stable electrodes, and various problems also arose, such as large contact resistance, etc. The results of this research provide a revolutionary method which solves the problems encountered to date.
  6. In integrated circuits and future nano devices, an understanding of the formation process of materials in nano spaces and the properties of those materials from the fundamental mechanism will contribute to solving essential problems. The results of the present research were demonstrated for the first time through collaboration by a large number of research institutions and researchers with various specialties.
  7. The results of this research will be announced at the International Electron Device Meeting (IEDM) 2010 at 16:45 p.m. on December 8 (Monday), Japan time (10:45 a.m. December 7, local time in San Francisco).