World’s Highest Performance Nanodielectrics
Tailor-Made Nanocrystals via controlled nanoscale doping
2011.07.14
(2011.08.01 Update)
National Institute for Materials Science
Japan Science and Technology Agency
A research group led by MANA Scientist Dr. Minoru Osada and MANA Principal Investigator Dr. Takayoshi Sasaki of the International Center for Materials Nanoarchitectonics , National Institute for Materials Science, developed new doping technique which enables fine tuning of chemical composition and structure in oxide nanocrystals.
Abstract
Such a doping, a well-known technique in bulk materials, is now useful for designing high-k properties of individual nanocrystals. Our work provides a new recipe for designing nanodielectrics desirable for future capacitor and memory devices.
This research was carried out as a part of the Core Research for Evolutional Science and Technology (CREST) project “Creation of New Nanomaterials and Manufacturing Processes for Next-Generation Electronics using Inorganic Nanosheets” (Project Leader: Takayoshi Sasaski) in Japan Science and Technology Agency (JST).
!["Figure : Tailor-made dielectric nanosheet via controlled nanoscale doping. (a) Structural change induced by Nb doping. (b) AFM image of Nb-doped nanosheet." Image](/eng/news/press/2011/07/hdfqf1000000cs86-img/hdfqf1000000csb8.jpg)
Figure : Tailor-made dielectric nanosheet via controlled nanoscale doping. (a) Structural change induced by Nb doping. (b) AFM image of Nb-doped nanosheet.